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| 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3562 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit 2 C/W C/W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C(initial), L = 16.8 mH, IAR = 6 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 1 2004-07-01 2SK3562 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min Typ. Max Unit 30 600 2.0 0.9 5.0 1050 10 110 20 40 35 130 28 16 12 10 100 A V A V V 4.0 1.25 1.2 S Yfs Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz pF 10 V VGS 0V 50 ID = 3 A VOUT ns RL = 66 VDD 200 V - nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 6 24 Unit A A V ns IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/s 1000 7.0 -1.7 C Marking K3562 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-01 2SK3562 ID - VDS 5 COMMON SOURCE Tc = 25C PULSE TEST 10 15 4.8 10 6 5 4.6 3 4.4 2 4.2 1 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 10,15 5.2 ID - VDS COMMON SOURCE Tc = 25C PULSE TEST DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 4 8 5 6 4.8 4.6 4 4.4 2 4.2 VGS = 4 V 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID - VGS VDS - VGS VDS (V) 10 COMMON SOURCE 10 COMMON SOURCE Tc = 25 8 PULSE TEST DRAIN CURRENT ID (A) 8 VDS = 20 V PULSE TEST 6 DRAIN-SOURCE VOLTAGE 6 ID = 6 A 4 4 Tc = -55C 2 100 25 2 3 1.5 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (S) 100 10 RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (m) COMMON SOURCE Tc = 25C PULSE TEST 10 Tc = -55C 25 100 1 COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 1 VGS = 10 V15V 0.1 0.1 1 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2004-07-01 2SK3562 RDS (ON) - Tc 5 10 IDR - VDS DRAIN-SOURCE ON RESISTANCE RDS (ON) (m ) DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE PULSE TEST 4 COMMON SOURCE 5 3 Tc = 25C PULSE TEST 3 ID = 6A 2 3 VGS = 10 V 1.5 1 1 0.5 10 0.3 5 VGS = 0, -1 V -0.8 -1 -1.2 3 0.1 0 -0.2 -0.4 1 -0.6 0 -80 -40 0 40 80 120 160 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE - VDS 10000 5 Vth - Tc (pF) Ciss 1000 GATE THRESHOLD VOLTAGE Vth (V) 4 CAPACITANCE C 3 100 Coss 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 3 5 10 30 50 100 Crss DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS (V) 40 400 VDS VDD = 100 V 200 16 DRAIN-SOURCE VOLTAGE 30 300 12 20 200 VGS 100 400 COMMON SOURCE ID = 6 A Tc = 25C PULSE TEST 8 10 4 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2004-07-01 GATE-SOURCE VOLTAGE VGS (V) 50 500 20 DRAIN POWER DISSIPATION PD (W) 2SK3562 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM SINGLE PULSE 0.01 t T Duty = t/T Rth (ch-c) = 3.125C/W 0.01 0.001 10 100 1 10 100 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSED) * 100 s * 500 EAS - Tch DRAIN CURRENT ID (A) 10 ID max (CONTINUOUS) * 1 ms * AVALANCHE ENERGY EAS (mJ) 400 300 1 DC OPERATION Tc = 25C 200 100 SINGLE NONREPETITIVE 0.1 PULSE Tc=25 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN 0 25 50 75 100 125 150 0.01 1 TEMPERATURE. VDSS max 100 1000 CHANNEL TEMPERATURE (INITIAL) Tch (C) 10 DRAIN-SOURCE VOLTAGE VDS (V) 15 V BVDSS IAR VDD VDS -15 V TEST CIRCUIT RG = 25 VDD = 90 V, L = 16.8mH WAVE FORM AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2004-07-01 |
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